MF Elektronik ve Haberleşme Müh.
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EEE216 Semiconductor Devices |
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English |
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| Instructor |
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Assoc. Prof. Dr. Thomas F. Bechteler
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| Office room |
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B-204
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Tue-Wed-Thu 10:30-12:00 |
| Office Tel. |
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409
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| Teaching Assistant |
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| 1. Prerequisites |
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None |
| 2. Contents |
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Semiconducting materials: Miller indices, electrons and holes, energy band model, carrier properties, doping, state and carrier distributions, Fermi function and Fermi level, drift, mobility, diffusion, Einstein relationship, recombination-generation, carrier lifetimes, diffusion length. PN-junction: electrostatics, built-in voltage, i/u characteristics of pn-junctions, photo diode, LED, pin diode, Schottky contact. Bipolar junction transistor: fundamentals, biasing, electrostatics, performance parameters, dynamic response modelling. Field effect transistor: junction FET, i/u-characteristics, MES-FET, MOS fundamentals, inverse channel, theory of chage control. Equivalent circuits: pn-junction, BJT, MOSFET. Noise: definition, power, thermal noise, shot noise, resistor, diode, BJT, MOSFET. |
| 3. Objectives |
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A refined and detailed investigation of semiconductor devices and their electrical operation.
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4. Textbook/
Lecture notes |
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R. Pierret: "Semiconductor Device Fundamentals", Addison Wesley, 1996.
D. A. Neamen: "An Introduction to Semiconductor Devices", McGraw Hill, 2006.
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| 5. Attendance |
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Compulsory attendance for theory lectures is 70%.
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| 6. Grading |
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Midterm 40%, Final 60%
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| 7. Academic dishonesty |
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Academic dishonesty is related to cheating and plagiarism. Copying in whole or in part others’ assignments, lab works or exams, is considered cheating respectively plagiarism. All parties involved will receive a zero score for the lab, assignment or the exam. |
| Week |
Topic
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Chapter
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Assignments
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| 1 |
Semiconductors and crystals, Miller index.
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Pierret: 1 |
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Carrier modelling, the energy band diagram.
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Pierret: 2
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| 3 |
Doping of semiconductors
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Pierret: 2 |
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| 4 |
State and carrier distributions, Fermi-level
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Pierret: 2 |
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Carrier action: drift and diffusion
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Pierret: 3
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Recombination and generation
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Pierret: 3 |
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Carrier life times, diffusion length
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Pierret: 3 |
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M I D T E R M |
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pn-junction: electrostatics
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Pierret: 5
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pn-junction: I-V characteristics
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Pierret: 6
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Bipolar junction transistor |
Pierret: 10
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Field effect transistor: J-FET
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Pierret: 15 |
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Field effect transistor: MOS-FET
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Pierret: 16, 17
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Equivalent circuits of diode, BJT, and FET
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Handouts |
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Noise |
Handouts |
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F I N A L E X A M S |
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F I N A L E X A M S |
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